| PART |
Description |
Maker |
| FS1209DH FS1209BH FS1209MH FS1210BH |
Standard Gate SCRs
600 V, standard SCR
200 V, standard SCR
400 V, standard SCR
|
Fagor
|
| 2N5166 2N4147 2N1600 2N1598 2N893 2N899 |
20 A, 400 V, SCR
0.25 A, 100 V, SCR, TO-52
8 A, 50 V, SCR, TO-64
1.6 A, 300 V, SCR, TO-5
0.25 A, 15 V, SYMMETRICAL GTO SCR, TO-18
0.25 A, 100 V, GATE TURN-OFF SCR, TO-18
|
SEMITRONICS CORP
|
| MCR100-6 |
Standard Gate SCR
|
DnI
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|202
|
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| R216CH12FKO R216CH12CJO R216CH12CHO R325CH02CJO R3 |
879.2 A, 1200 V, SCR, TO-200AB
1852.6 A, 200 V, SCR
1891.85 A, 1800 V, SCR
1271.7 A, 200 V, SCR, TO-200AC
1271.7 A, 400 V, SCR, TO-200AC
1271.7 A, 600 V, SCR, TO-200AC
1271.7 A, 1000 V, SCR, TO-200AC
1271.7 A, 800 V, SCR, TO-200AC
1998.61 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| AS7C3256AA AS7C3256A AS7C3256A-20TIN AS7C3256A-10J |
Quadruple D-Type Flip-Flops With Clear 16-TSSOP -40 to 85
Dual 4-Input Positive-NAND Gate 14-TSSOP -40 to 85 32K X 8 STANDARD SRAM, 20 ns, PDSO28
IC,AS7C3256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,3.3V 32K X 8 STANDARD SRAM, 10 ns, PDSO28
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 10 ns, PDSO28
Dual 4-Input Positive-NAND Gate 14-SOIC -40 to 85 32K X 8 STANDARD SRAM, 12 ns, PDSO28
Dual 4-Input Positive-NAND Gate 14-TVSOP -40 to 85
Dual 4-Input Positive-NAND Gate 14-SSOP -40 to 85
SRAM - 3.3V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Memory, Inc.
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| P036RH06FNO P042RH04CM P027PH04CJO P042RH04CMO P02 |
100 A, 600 V, SCR
100 A, 400 V, SCR, TO-65
670 A, 600 V, SCR, TO-200AB
755 A, 600 V, SCR, TO-200AB
670 A, 200 V, SCR, TO-200AB
355 A, 600 V, SCR
355 A, 1000 V, SCR
355 A, 400 V, SCR
5680 A, 2600 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| VSKT25016PBF VSKT17016PBF |
SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A
|
Vishay Siliconix
|
|
